C absolute maximum ratings tc25c, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 800 v gatesource voltage vgss 30 v continuous id 6 a drain current note 2 pulsed idm 22 a single pulsed note 3 eas 680 mj avalanche energy. Description 2006 fairchild semiconductor corporation. These nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. J absolute maximum ratings tc25c, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 900 v gatesource voltage vgss 30 v continuous tc25c id 6. Spa11n80c3 coolmostm power transistor features new revolutionary high voltage technology extreme dvdt rated high peak current capability qualified according to jedec 1 for target applications. High speed optocoupler, 1 mbd, photodiode with transistor output. Spw11n80c3 mosfet nch 800v 11a to247 infineon technologies datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. This datasheet is subject to change without notice. Y2010dn datasheet pdf, y2010dn datasheet, y2010dn pdf, y2010dn pinout, y2010dn data, circuit, ic, manual, substitute, parts, schematic, reference. Monolithic linear ic la78045 tv and crt display vertical support. A fqa9n90c 900v n cha n nel mos f et july 2007 qfet fqa9n90c 900v nchannel mosfet features 9a, 900v, rdson 1. Spp11n60c3 spi11n60c3, spa11n60c3, spa11n60c3 e8185 electrical characteristics parameter symbol conditions values unit min. Electronic manufacturer, part no, datasheet, electronics description. Q electrical characteristics tj 25c, unless otherwise specified parameter symbol test conditions min typ max unit.
High speed optocoupler, 100 kbd, low input current. B, 21mar11 1 this datasheet is subject to change without notice. High speed optocoupler, 1 mbd, photodiode with transistor. Id l high speed power switching l hard switched and high frequency circuits 650v 155m 22a l leadfree benefits d l ultra low gate charge qg results in simple. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. Octal dtype transparent latches and edgetriggered flip. Spp06n80c3 coolmostm power transistor features new revolutionary high voltage technology extreme dvdt rated high peak current capability qualified according to jedec1 for target applications pbfree lead plating.
Fqp6n90cfqpf6n90c 900v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. J ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 6n90lta3t 6n90gta3t to220 g d s tube. Fqp9n90cfqpf9n90c 900v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. Product specification production this data sheet contains final specifications. Spp20n60c3 transistor datasheet, spp20n60c3 equivalent, pdf data sheets. Spp06n80c3 coolmostm power transistor features new revolutionary high voltage technology extreme dvdt rated high peak current capability qualified according to jedec1 for target applications. En7881a monolithic linear ic tv and crt display vertical output ic with bus control support. Fmr11n90e fuji power mosfet super fape3 series nchannel silicon power mosfet features outline drawings mm equivalent circuit schematic maintains both low power loss and low noise to3pf lower r on characteristic ds more controllable switching dvdt by gate resistance draind smaller v ringing waveform during. Monolithic linear ic la78045 tv and crt display vertical. High speed optocoupler, 100 kbd, low input current, photodiode darlington output features high current transfer ratio, 300 % low input current, 0. Data sheet status product status definitions preliminary specification development this data sheet contains preliminary data. Ferroxcube reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
K electrical characteristics tc 25c, unless otherwise specified parameter symbol test conditions min typ max unit. Fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. Russian 6p3s, 6p3se 6n3c, 6n3ce general tetrode, used in output stages of low frequency amplifiers. Nchannel mos field effect transistor high voltage switching applications. I d 3a v gs, gatesource voltage v q g, total gate charge nc 0.
Id l high speed power switching l hard switched and high frequency circuits 650v 155m 22a l leadfree benefits d l ultra low gate charge. December 20 thermal characteristics fqp6n90c fqpf6n90c nchannel qfet mosfet 900 v, 6. Unisonic technologies, 6n90z, nchannel power mosfet. Fmr11n90e fuji power mosfet super fape3 series nchannel silicon power mosfet features outline drawings mm equivalent circuit schematic maintains both low power loss and low noise to3pf lower r on characteristic ds more controllable switching dvdt by gate resistance draind smaller v ringing waveform during switching gs. Semiconductor ftk6n70pfdi technical data power mosfet 6. Spp11n60c3 spi11n60c3, spa11n60c3, spa11n60c3 e8185 forward characteristics of body diode if f vsd parameter. Inverse diode continuous forward current is tc25c 11 a inverse diode direct current, pulsed ism 33 inverse diode forward voltage vsd vgs0v, ifis 1 1.
Oct 01, 2015 y2010dn datasheet pdf, y2010dn datasheet, y2010dn pdf, y2010dn pinout, y2010dn data, circuit, ic, manual, substitute, parts, schematic, reference. Electron devices svetlana svetlana 6n1p dual audio triode 10 20 30 40 0 100 200 300 400 500 0 vg ov2 46810 12 plate current milliamperes 14. Fairchild semiconductor reserves the right to make changes. Fairchild semiconductor reserves the right to make changes at any. This datasheet contains preliminary data, and supplementary data will be published at a later date.